TCT investigation of the one-sided depletion of low-temperature covalently bonded silicon sensor P-N diodes

In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables instance fabrication novel highly efficient X-ray imaging sensors. order to investigate effects on signal generated such sensors, bonded silicon-silicon P-N pad diodes have previously been produced. The behaviour these test samples is being investigated transient current technique (TCT) measurements. this paper we present an overview TCT setup well a custom sandwich-type sample holder used A review results presented previous shows, that structures show asymmetric depletion under reverse bias. IR edge measurements confirm only P-side depleted.